| PART |
Description |
Maker |
| WED9LC6816V1310BI WED9LC6816V1512BI |
256K X 32 SSRAM/ 4M X 32 SDRAM 256 × 32的SSRAM / 4米32内存
|
Electronic Theatre Controls, Inc.
|
| AS5SS256K36ADQ-8.5/883C AS5SS256K36DQ-8.5/883C AS5 |
256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM
|
Austin Semiconductor
|
| AS5SS256K18DQ-8IT |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor, Inc
|
| WED9LC6816V1612BI WED9LC6816V1612BC WED9LC6816V201 |
256Kx32 SSRAM/4Mx32 SDRAM
|
WEDC[White Electronic Designs Corporation]
|
| S8S3122X16-TCR2 S8S3122X16 S8S3122X16-TCR1 DSS8S31 |
256K x 16 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M13S32321A |
256K x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| MB81P643287 MB81P643287-50 MB81P643287-60 |
8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| CY7C1041V33 CY7C1041V33-15ZC CY7C1041V33-20ZC CY7C |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44
From old datasheet system
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 7FT
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
